SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The RB215T-90HZC9 is a silicon epitaxial planar Schottky barrier diode qualified under the AEC-Q101 automotive standard. It features a common cathode dual chip configuration housed in a TO-220FN (3-pin) leaded package. The device supports an average rectified forward current of 20A and withstands a repetitive reverse voltage of 90V. Key electrical characteristics include a maximum forward voltage of 0.75V at 10A, a peak surge forward current capability of 100A for one cycle at 60Hz, and a maximum reverse current of 400μA at 90V. The junction temperature rating reaches 150°C with a thermal impedance from junction to case of 1.75°C/W.
Verify the specific ordering suffix C9 against the manufacturer's latest documentation to confirm packaging details and availability status. Confirm that the component meets all required environmental and electrical specifications for the intended application before finalizing procurement decisions.
Select this component for designs requiring a robust, leaded Schottky diode with high current handling capabilities. Ensure the circuit layout accommodates the TO-220FN package dimensions and provides adequate heat sinking to maintain junction temperatures within the 150°C limit during operation.
This part belongs to the RB215T series of Schottky barrier diodes manufactured by ROHM Semiconductor. The series is characterized by its low forward voltage drop and high reliability, making it suitable for various general rectification tasks in both industrial and automotive environments.
Consult official ROHM documentation for verified substitute part numbers. Do not assume compatibility based on generic parameters; verify pinout, voltage ratings, and package dimensions against the original specification sheet.