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The RB218NS200TL is a Schottky barrier diode manufactured by ROHM Semiconductor, housed in a TO-263S (D2PAK) surface-mount package. It features a dual anode common cathode configuration with three terminals. Key electrical specifications include a maximum repetitive reverse voltage of 200V and an average rectified forward current rating of 20A. The device supports a forward surge current of 100A and maintains a maximum junction temperature of 150°C. Its low reverse leakage current of 0.01mA at 200V ensures efficient operation.
Verify the specific suffix TL against official datasheets to confirm tape-and-reel packaging and quantity. Ensure the component meets RoHS compliance requirements for your region. Confirm that the TO-263S package dimensions align with your PCB footprint design before finalizing procurement orders.
Select this component when designing circuits that demand low reverse leakage at elevated temperatures. It serves as a suitable replacement for general FRDs where efficiency is critical. Ensure the 200V rating exceeds the peak inverse voltage in the application. Verify thermal management capabilities to maintain junction temperatures within the specified 150°C limit during continuous operation.
This part belongs to the RBxx8 series, which addresses the thermal instability issues typical of Schottky diodes. The series employs specialized blocking metal structures to mitigate reverse current degradation at high temperatures. This makes it distinct from standard Schottky diodes that may suffer from thermal runaway in demanding applications.
RB218NS200FHTL offers similar specifications with AEC-Q101 automotive qualification. RB218BM200TL provides identical electrical performance but utilizes a TO-252M package instead of TO-263S. Verify pinout compatibility and thermal dissipation requirements when substituting these alternatives.