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Product Detailed Parameters
- Description：DIODE ARRAY SCHOTT 60V 40A LPDS
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Diode Configuration：1 Pair Common Cathode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：60 V
- Current - Average Rectified (Io) (per Diode)：40A
- Voltage - Forward (Vf) (Max) @ If：860 mV @ 20 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：12 µA @ 60 V
- Operating Temperature - Junction：150°C
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：LPDS
- Grade：-
- Qualification：-
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Overview
The RB238NS-60TL is a Schottky barrier diode manufactured by ROHM Semiconductor, housed in a TO-263S (D2PAK) surface-mount package. It features a dual anode common cathode configuration with silicon technology. Key electrical parameters include a maximum repetitive reverse voltage of 60 V and an average forward current of 40 A per diode. The typical forward voltage is 860 mV at 20 A, while the reverse leakage current is specified at 12 uA. The device supports a maximum operating junction temperature of +150 C and can handle a forward surge current of 100 A.
Feature Summary
- Dual anode common cathode configuration for efficient circuit design
- Super low reverse leakage current characteristics
- High reliability construction suitable for demanding environments
Applications
- Switching power supplies
- Automotive electronic systems
- General purpose rectification
Procurement Notes
Verify the specific suffix TL against official ROHM documentation to confirm reel packaging specifications. Ensure the component meets AEC-Q101 automotive standards if required for the target application. Cross-reference the datasheet revision date to validate parameter accuracy before integration into final designs.
Selection Notes
Select this component when a 60 V rating and 40 A continuous current capacity are required in a compact surface-mount form factor. The dual common cathode arrangement simplifies bridge or freewheeling circuit topologies. Consider the thermal performance of the TO-263S package for heat dissipation requirements in high-current applications.
Part Context
This part belongs to the RB238NS series of Schottky barrier diodes from ROHM Semiconductor. The series offers various voltage ratings including 40 V, 60 V, and 100 V options. These devices are designed for high-efficiency rectification with low forward voltage drop and minimal reverse recovery charge, making them suitable for modern power management solutions.
Replacement Considerations
The RB238NS-60FH is a verified alternative within the same series offering identical electrical characteristics and pinout compatibility. Both parts share the TO-263S package and dual common cathode configuration, allowing for direct substitution in existing designs without circuit modification.
