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The RB238NS100FHTL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, designed for surface mount applications in the TO-263S (D2PAK) package. It features a dual anode common cathode configuration with a maximum repetitive reverse voltage of 110 V and a continuous forward current rating of 40 A per diode. The device exhibits a maximum forward voltage of 760 mV at 20 A and supports a forward surge current of 100 A. Operating within a junction temperature range up to +150°C, it meets AEC-Q101 automotive qualification standards.
Verify the specific suffix FHTL against the manufacturer's latest datasheet to confirm packaging details and tape-and-reel specifications. Ensure the procurement channel provides original documentation matching the ROHM Semiconductor part number. Cross-reference the AEC-Q101 certification status if automotive compliance is required for the final assembly.
Select this component when a high-current Schottky rectifier with automotive reliability is required in a D2PAK footprint. Compare the 40 A current rating and 110 V blocking voltage against circuit requirements. Consider the thermal performance of the TO-263S package for heat dissipation needs in compact designs.
This part belongs to the RB238NS series of Schottky barrier diodes from ROHM Semiconductor. The series is characterized by low forward voltage drop and high surge current capability. The RB238NS100FHTL specifically targets applications requiring robust performance in automotive and industrial power management systems.
Check for direct substitutes within the RB238NS family with different voltage ratings, such as RB238NS060FHTL or RB238NS150FHTL, ensuring pin compatibility and electrical parameters meet design constraints.