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The RB238T100NZC9 is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, designed for through-hole mounting in the TO-220FN-3 package. It features a dual anode common cathode configuration with a maximum repetitive reverse voltage of 100 V and an average forward current rating of 40 A. The device exhibits a maximum forward voltage of 0.86 V at 20 A and a maximum reverse current of 20 mA at 100 V. It supports a forward surge current of 100 A and operates within a junction temperature range up to +150°C.
Verify the specific suffix C9 against the official datasheet to confirm packaging details and compliance status. Ensure the component meets AEC-Q101 automotive qualification requirements if intended for vehicle applications. Cross-reference the manufacturer part number with authorized distributor listings to confirm authenticity and availability before finalizing procurement orders.
Select this component when a through-hole solution with high current capacity is required. The TO-220FN-3 package provides robust thermal performance for power dissipation. Consider the 100 V reverse voltage rating relative to system peak voltages. Evaluate the 40 A continuous current capability against load requirements to ensure adequate margin for operation.
This part belongs to the RB238 series of Schottky barrier diodes from ROHM Semiconductor. The series offers various voltage ratings and package options, including surface mount and through-hole configurations. The RB238T100NZC9 specifically targets applications requiring high reliability and low forward voltage drop in a standard leaded package format.
Public confirmed substitute part numbers are not available in the provided documentation.