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The RB717UMFHTL is a Schottky barrier diode manufactured by ROHM Semiconductor, designed for high-speed switching applications. It features a dual cathode common anode configuration housed in an SOT-323FL-3 surface-mount package. The device utilizes silicon technology and supports a maximum operating temperature of +125°C. Key electrical parameters include a forward current (If) of 30 mA, a repetitive reverse voltage (Vrrm) of 45 V, and a forward voltage (Vf) of 370 mV at 1 mA. The component also specifies a forward surge current (Ifsm) of 200 mA and a reverse current (Ir) of 1 µA.
Verify the specific suffix HTL to confirm tape-and-reel packaging quantities and handling requirements. Ensure compatibility with SOT-323FL-3 footprint dimensions during PCB layout. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Cross-reference datasheet revisions to ensure parameter consistency with current production batches.
Select this component when a low forward voltage drop and fast recovery time are critical for signal integrity. The dual cathode arrangement allows for compact designs in space-constrained applications. Consider the 45 V reverse voltage rating to ensure adequate margin against transient spikes in the target circuit environment.
This part belongs to ROHM's RB717 series of Schottky barrier diodes, which are engineered for automotive and industrial applications. The series emphasizes high reliability and small form factors, utilizing advanced silicon processes to achieve superior switching performance compared to standard rectifiers.
RB717UM: Standard commercial grade variant without automotive qualification. RB717FT106: Alternative package option in SOT-323-3 with similar electrical characteristics.