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Product Detailed Parameters
- Description：DIODE ARRAY SCHOTT 20V 1A TUMD5
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Diode Configuration：2 Independent
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：20 V
- Current - Average Rectified (Io) (per Diode)：1A
- Voltage - Forward (Vf) (Max) @ If：430 mV @ 500 mA
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：200 µA @ 20 V
- Operating Temperature - Junction：125°C
- Mounting Type：Surface Mount
- Package / Case：6-SMD (5 Leads), Flat Leads
- Supplier Device Package：TUMD5
- Grade：-
- Qualification：-
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Overview
The RBE1KA20ATR is a high-efficiency, high-reliability Schottky barrier diode array manufactured by ROHM Semiconductor. It features a dual line configuration within a compact TUMD5 (SOT-353T) surface-mount package. The device supports an average rectified forward current of 1 A and a repetitive reverse voltage of 20 V, with a maximum reverse voltage rating of 30 V. Key electrical parameters include a maximum forward voltage of 0.43 V at 0.5 A and a maximum reverse current of 0.2 mA at 20 V. It withstands a forward surge current of 3 A and operates within a junction temperature range up to 125°C.
Feature Summary
- Dual line configuration for independent or common cathode applications
- Compact plastic TUMD5 package design for space-constrained layouts
- High reliability construction suitable for demanding environments
Applications
- General purpose rectification in consumer electronics
- Power supply input protection circuits
- Freewheeling diodes in low-current DC-DC converters
Procurement Notes
Verify the specific ordering suffix to ensure correct packaging and tape specifications. Confirm RoHS compliance status as required by your assembly standards. Check the official supply status, as this model may be classified as not recommended for new designs. Ensure the procurement channel provides valid traceability documentation for quality assurance purposes.
Selection Notes
Select this component when a dual Schottky configuration is required in a minimal footprint. Compare the 1 A average current rating against circuit load requirements. Evaluate the 0.43 V forward voltage drop for efficiency needs. Consider the 125°C junction temperature limit for thermal management strategies in enclosed enclosures.
Part Context
This part belongs to ROHM's high-efficiency Schottky barrier diode series. It utilizes silicon technology optimized for low forward voltage and fast switching characteristics. The TUMD5 package allows for automated surface-mount assembly, supporting high-volume manufacturing processes while maintaining small board area consumption.
Replacement Considerations
Consult official substitution guides for equivalent dual Schottky diodes in SOT-353T packages. Verify pinout compatibility and electrical parameter margins before replacing. No direct public substitute part numbers are confirmed in the provided data.
