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The RBE2EA20ATR is a Schottky barrier diode array manufactured by ROHM Semiconductor, designed for surface-mount applications. It features a dual configuration within a TSMD-5 package (SOT-25). The device operates with an average rectified forward current of 2 A and supports a repetitive reverse voltage of 30 V, alongside a nominal reverse voltage rating of 20 V. Key electrical characteristics include a maximum forward voltage of 390 mV at 1 A, a peak forward surge current capability of 5 A, and a maximum reverse leakage current of 700 uA at 20 V. The component is rated for junction temperatures up to +125°C and is supplied in tape-and-reel packaging.
Verify the obsolete status carefully before procurement, as this component is marked Not Recommended for New Designs. Confirm that existing inventory sources are legitimate and that the specific reel quantity matches your production requirements. Ensure compatibility with the TSMD-5 footprint during final assembly validation.
Select this component only for legacy system maintenance or repair where the original design specifications must be strictly preserved. Evaluate alternative active components if new product development is underway, given the manufacturer's recommendation against new implementations. Verify thermal management capabilities align with the 125°C junction temperature limit.
This part belongs to ROHM’s high-efficiency Schottky diode series, characterized by small plastic packages like the TSMD-5. It serves as a specialized rectifier solution for low-voltage, high-current applications requiring fast switching speeds and minimal reverse recovery charge compared to standard PN junction diodes.
Public documentation does not list a direct pin-compatible replacement for this obsolete part. Engineers should consult ROHM technical support for potential cross-reference recommendations or evaluate similar dual Schottky arrays from other manufacturers that meet the 2A/20V specification.