RBLQ20NL10CTL

$2.81

Description：DIODE ARR SCHOTT 100V 20A TO263L
Series：-

SKU:d8904878d7b7 Category: Diode Arrays Brand: Rohm Semiconductor

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Product introduction

Product Detailed Parameters

Description：DIODE ARR SCHOTT 100V 20A TO263L
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Diode Configuration：1 Pair Common Cathode
Technology：Schottky
Voltage - DC Reverse (Vr) (Max)：100 V
Current - Average Rectified (Io) (per Diode)：20A
Voltage - Forward (Vf) (Max) @ If：710 mV @ 10 A
Speed：Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：70 µA @ 100 V
Operating Temperature - Junction：150°C
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package：TO-263L
Grade：-
Qualification：-

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RBLQ20NL10CTL

Overview

The RBLQ20NL10CTL is a Schottky barrier diode manufactured by Rohm Semiconductor, featuring a trench MOS structure. It has a repetitive peak reverse voltage of 100 V and an average rectified forward current of 20 A per diode. The device supports a peak forward surge current of 150 A and operates with a maximum junction temperature of 150 °C. Packaged in a TO-263L (LPDS) surface-mount format, it utilizes embossed tape reel packaging containing 1000 units.

Feature Summary

High reliability power mold type
Low forward voltage and low reverse current
Low capacitance design

Applications

Switching power supply
Freewheel diode
Reverse polarity protection

Procurement Notes

Verify the complete part number includes the TL suffix for tape-and-reel packaging configuration. Confirm that the TO-263L package dimensions match the target PCB footprint requirements. Ensure thermal management designs account for the specified junction-to-case thermal resistance values to prevent exceeding the maximum operating temperature during high-load conditions.

Selection Notes

Select this component for applications requiring efficient rectification with minimal conduction losses. The cathode common dual configuration allows for flexible circuit topologies. Consider the low capacitance feature for high-frequency switching environments where rapid recovery characteristics are necessary to maintain system efficiency and reduce electromagnetic interference.

Part Context

This device belongs to Rohm's LPDS series of Schottky barrier diodes. It employs a trench MOS structure to optimize the trade-off between forward voltage drop and reverse leakage current. The product is designed for surface-mount assembly, providing a compact solution for modern electronic equipment requiring high current density and reliable performance under varying thermal conditions.