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The RBQ10NS65ATL is a Schottky barrier diode manufactured by ROHM Semiconductor, featuring a TO-263S (D2PAK) surface-mount package. It operates with a maximum repetitive reverse voltage of 65V and an average rectified forward current of 10A. The device exhibits a maximum forward voltage of 0.69V at 5A and a maximum reverse current of 0.07mA at 65V. It supports a forward surge current of 50A and functions within a junction temperature range up to 150°C.
Verify the specific suffix 'ATL' against official ROHM documentation to confirm tape-and-reel packaging details. Ensure the component meets standard-grade requirements, as this series is not designated for automotive use. Cross-reference the RoHS compliance status directly from the manufacturer's datasheet before procurement.
Select this component for general-purpose rectification where low forward voltage drop is critical. The TO-263S package provides adequate thermal management for 10A applications. Note that this is a standard-grade part; do not select it for automotive environments requiring AEC-Q101 qualification.
This part belongs to ROHM's RBQ series of high-efficiency Schottky barrier diodes. These components are designed to balance low forward voltage and low reverse current. The series targets consumer electronics, offering a compact surface-mount solution for power management in portable devices.
The RBQ10NS65AFHTL is a related variant within the same family. Verify if the AFH suffix indicates specific automotive or reliability enhancements required for your application, as the standard RBQ10NS65A series is not recommended for automotive equipment.