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The RBQ10T65ANZC9 is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, designed for automotive applications under the AEC-Q101 standard. It features a common cathode configuration housed in a TO-220FN (3-pin) leaded package. The device supports an average rectified forward current of 10A and a repetitive reverse voltage of 65V. Key electrical characteristics include a maximum forward voltage of 0.65V at 5A and a maximum reverse current of 0.15mA at 65V. It withstands a forward surge current of 40A and operates within a junction temperature range up to +150°C.
Verify the specific suffix C9 against official ROHM documentation to confirm exact packaging and tape/reel specifications. Confirm availability status as this variant may be designated for existing customers only. Ensure the procurement channel provides valid traceability and authenticity guarantees for automotive-grade components.
Select this component when a robust, leaded TO-220FN Schottky diode is required for automotive power management. The low forward voltage aids in thermal management, while the AEC-Q101 certification ensures suitability for harsh automotive environments. Compare with surface-mount alternatives if board space constraints exist.
This part belongs to the RBQ series of high-reliability Schottky barrier diodes from ROHM. The series is engineered to balance low forward voltage and low reverse leakage current. The RBQ10T65ANZC9 specifically utilizes the TO-220FN package, offering higher current handling capabilities compared to smaller surface-mount variants in the same family.
Publicly confirmed substitute part numbers are not available in the provided source data. Consult ROHM technical support or authorized distributors for direct replacements or pin-compatible alternatives that meet AEC-Q101 requirements.