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The RBQ15BGE10ATL is a Schottky barrier diode manufactured by Rohm Semiconductor, designed for high-efficiency applications. It features a 65V reverse voltage rating and a 15A average rectified forward current capability. The device utilizes a TO-252 (D-PAK) surface-mount package with a cathode-common configuration. Key electrical characteristics include a maximum forward voltage of 0.63V at 7.5A and a low reverse leakage current of 0.14mA at 65V. It supports a peak forward surge current of 100A and operates within a junction temperature range up to 150°C.
Verify the specific ordering suffix 'TL' against the manufacturer's latest documentation to confirm reel packaging specifications. Ensure compatibility with RoHS directives if required by the target assembly process. Cross-reference the part number with official distributor catalogs to confirm current supply status and avoid obsolete stock issues during procurement.
Select this component when a balance of low conduction loss and minimal leakage is critical for system efficiency. The 65V rating suits low-voltage DC-DC conversion stages. Consider the thermal performance of the TO-252 package relative to the expected ambient temperature and current load to ensure reliable long-term operation without exceeding the 150°C junction limit.
This component belongs to Rohm's RBQ series of Schottky barrier diodes, which are engineered for high reliability and efficiency. The series typically offers various voltage ratings to suit different power management requirements. The RBQ15BGE10ATL specifically targets applications requiring robust performance in compact form factors, leveraging advanced silicon processes to minimize energy losses during switching operations.
The RBQ15BGE65ATL is documented as a recommended replacement with the same pinout and package. Verify that the 65V rating of the substitute matches the circuit requirements. Confirm that the forward voltage and leakage current specifications remain within acceptable limits for the specific application design.