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The RBQ20BM100AFHTL is a Schottky barrier diode manufactured by ROHM Semiconductor, housed in a TO-252AA (D-Pak) surface-mount package. It features a dual anode common cathode configuration with a silicon construction. Key electrical parameters include a maximum repetitive reverse voltage of 100 V and an average rectified forward current of 20 A. The device exhibits a maximum forward voltage of 690 mV at 10 A and a maximum reverse current of 0.2 mA at 100 V. It supports a forward surge current of 100 A and operates at junction temperatures up to +150 °C.
Verify the specific suffix AFHTL against official ROHM documentation to confirm the tape-and-reel packaging format and automotive qualification status. Ensure the ordering code matches the exact voltage and current ratings required for the target application. Cross-reference the datasheet revision date to validate parameter consistency before finalizing procurement orders.
Select this component when a 100 V rated Schottky diode with 20 A continuous current capability is required in a compact D-Pak footprint. The AEC-Q101 certification makes it suitable for automotive applications where thermal stability and low reverse leakage are critical. Compare forward voltage characteristics against alternative packages if space constraints differ.
This part belongs to the RBQ series of Schottky barrier diodes from ROHM Semiconductor. The series is characterized by low forward voltage and low reverse current, targeting consumer electronics, automotive, and industrial equipment. The RBQ20BM100 variant specifically addresses high-current requirements within the 100 V blocking voltage range.
Publicly confirmed substitute part numbers for this specific model were not identified in the provided source material.