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The RBQ20BM65AFHTL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, designed for high-reliability automotive applications. It features a dual anode common cathode configuration housed in a TO-252-3 (DPAK) surface-mount package. The device supports a maximum repetitive reverse voltage of 65 V and an average rectified forward current of 20 A. Key electrical parameters include a forward voltage of 560 mV at 10 A, a reverse current of 35 uA, and a surge current rating of 100 A. It operates up to a junction temperature of +150 C and holds AEC-Q101 qualification.
Verify the complete part number including the suffix against official ROHM documentation to ensure correct packaging and tape specifications. Confirm that the required AEC-Q101 automotive qualification aligns with your specific application standards. Cross-reference the TO-252-3 footprint dimensions with your PCB layout guidelines prior to procurement to guarantee mechanical compatibility.
Select this component when a 65 V reverse voltage rating and 20 A continuous current capacity are required in a DPAK package. The dual anode common cathode configuration is suitable for bridge or synchronous rectification topologies. Ensure the design accommodates the specified 150 C maximum junction temperature and verify thermal dissipation requirements for the chosen operating environment.
This component belongs to the RBQ series of Schottky barrier diodes from ROHM Semiconductor. The series is characterized by low forward voltage and low reverse current, targeting general rectification needs in consumer, automotive, and industrial sectors. The RBQ20BM65AFHTL specifically addresses the demand for high-current, automotive-certified solutions in space-constrained surface-mount applications.
The alias RBQ20BM65AFH represents the same device without the reel/tape suffix. Verify package and electrical equivalence before substituting with other 65 V, 20 A dual Schottky diodes from different manufacturers, as pinout and thermal characteristics may vary.