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The RBQ20BM65ATL is a dual Schottky barrier diode manufactured by ROHM Semiconductor, housed in a TO-252-3 (DPAK) surface-mount package. It features a common cathode configuration with silicon technology. Key electrical parameters include a maximum repetitive reverse voltage of 65 V and an average rectified forward current of 20 A. The device exhibits a typical forward voltage of 560 mV at rated current and a low reverse leakage current of 35 uA. It supports a forward surge current of 100 A and operates at junction temperatures up to +150 C. The component is qualified under the AEC-Q101 automotive standard.
Verify the specific ordering suffix against official documentation to confirm packaging type and reel specifications. Ensure the part number matches the required automotive qualification status. Cross-reference the manufacturer's datasheet for any updates on lead times or lifecycle status before finalizing procurement plans.
Select this component for applications requiring high current handling in a compact surface-mount form factor. The 65 V rating suits low-voltage automotive systems. Consider the thermal performance of the TO-252 package for heat dissipation requirements. Verify compatibility with existing PCB footprints designed for DPAK packages.
This part belongs to ROHM's RBQ series of Schottky barrier diodes, known for low forward voltage and low reverse leakage current. The series is widely used in consumer electronics, automotive, and industrial equipment. The RBQ20BM65ATL specifically targets applications needing robust rectification with automotive reliability standards.
RBQ20BM65A is listed as an alias for this component family. For pin-compatible alternatives, verify specific electrical tolerances and package dimensions against the original design requirements.