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The RBQ20NS45ATL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, housed in a surface-mount TO-263S (D2PAK) package. It features a dual anode common cathode configuration with a maximum repetitive reverse voltage of 45 V and a continuous forward current rating of 20 A. The device exhibits a low forward voltage of 540 mV at 10 A and a minimal reverse leakage current of 30 uA. It supports a forward surge current of 100 A and operates at junction temperatures up to +150 C.
Verify the complete part number including the suffix to ensure correct packaging and tape specifications. Confirm RoHS compliance status through official documentation before integration. Cross-reference the manufacturer's datasheet for specific handling and soldering guidelines required for the TO-263S package type.
Select this component when a dual diode solution is required in a compact surface-mount form factor. The 45 V rating suits low-voltage DC systems. Evaluate the thermal management requirements given the 20 A current capacity and the TO-263S package constraints. Ensure the application does not exceed the specified maximum junction temperature limits during operation.
This component belongs to ROHM's RBQ series of Schottky barrier diodes designed for high-efficiency applications. The series offers various voltage ratings while maintaining consistent current capabilities and package styles. The RBQ20NS45ATL specifically addresses needs for low-loss rectification in modern power electronics where space and thermal performance are critical design factors.
The RBQ20NS45A is listed as an alias for this part number. Verify pinout compatibility and electrical parameters against alternative dual Schottky diodes in the TO-263S package if sourcing from different manufacturers.