RBR10BM30AFHTL

RBR10BM30AFHTL

$1.16
  • Description:DIODE ARRAY SCHOT 30V 10A TO-252
  • Series:-

SKU:6d3efc3fb051 Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE ARRAY SCHOT 30V 10A TO-252
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):30 V
  • Current - Average Rectified (Io) (per Diode):10A
  • Voltage - Forward (Vf) (Max) @ If:550 mV @ 5 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:100 µA @ 30 V
  • Operating Temperature - Junction:150°C (Max)
  • Mounting Type:Surface Mount
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package:TO-252
  • Grade:Automotive
  • Qualification:AEC-Q101

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RBR10BM30AFHTL

Overview

The RBR10BM30AFHTL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, housed in a TO-252-3 (DPAK) surface-mount package. It features a dual anode common cathode configuration with a maximum repetitive reverse voltage of 30 V and an average rectified forward current of 10 A. The device exhibits a maximum forward voltage of 550 mV at 5 A and a maximum reverse current of 100 uA at 30 V. It supports a forward surge current of 50 A and operates at junction temperatures up to +150 °C. This component holds AEC-Q101 qualification for automotive reliability.

Feature Summary

  • Dual anode common cathode configuration enables efficient circuit design for general rectification applications.
  • Automotive-grade reliability certified under the AEC-Q101 standard for harsh environment operation.
  • Low forward voltage characteristic optimizes power efficiency during conduction.
  • High thermal stability allows sustained operation at elevated junction temperatures.

Applications

  • Automotive general-purpose rectifier circuits
  • DC-DC converter freewheeling diodes
  • Power supply output rectification

Procurement Notes

Verify the complete part number including the suffix to ensure correct packaging and tape specifications. Confirm that the required AEC-Q101 automotive qualification aligns with your system's reliability standards. Check the specific forward voltage and reverse current limits against your thermal management calculations. Ensure the TO-252-3 footprint matches your PCB layout constraints before finalizing procurement.

Selection Notes

Select this component when a 30 V blocking capability and 10 A continuous current rating are required in a compact surface-mount form factor. The dual anode structure offers flexibility for bridge or synchronous rectification topologies. Consider the 550 mV forward voltage drop for efficiency analysis. Verify that the 50 A surge current rating exceeds potential inrush currents in the target application.

Part Context

This device belongs to ROHM's high-reliability Schottky barrier diode series designed specifically for automotive electronics. The RBR10BM30AFHTL variant utilizes silicon technology to provide robust performance in power management modules. It is part of a broader family offering various voltage and current ratings within the same package style for standardized design integration.

Replacement Considerations

The part number alias RBR10BM30AFH represents the same component without the specific reel suffix. Cross-reference other ROHM SBDs with identical 30 V, 10 A, and TO-252-3 specifications if sourcing alternatives. Ensure any substitute maintains AEC-Q101 certification for automotive use cases.

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