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The RBR10NS40ATL is a dual common cathode Schottky barrier diode manufactured by ROHM Semiconductor. It features a silicon epitaxial planar structure housed in a TO-263-3 (D²Pak) surface-mount package. The device supports an average rectified forward current of 5A per diode and a maximum repetitive peak reverse voltage of 40V. Key electrical characteristics include a forward voltage of 620mV at 5A and a reverse leakage current of 120µA at 40V. It operates with a junction temperature up to 150°C.
Verify the specific suffix 'TL' against the manufacturer's official datasheet to confirm tape and reel packaging specifications. Ensure the ordering part number matches the exact electrical ratings required for the target application. Cross-reference the RoHS compliance status and AEC-Q101 qualification if automotive reliability is mandated, as standard industrial versions may differ.
Select this component when a compact dual-diode solution is required for low-voltage, medium-current applications. The TO-263-3 package provides adequate thermal dissipation for 5A operation without excessive board space usage. Consider the 40V rating margin relative to the system's peak inverse voltage to ensure reliable blocking performance under transient conditions.
This device belongs to the RBR10NS series of Schottky barrier diodes from ROHM. The series is designed for high-reliability applications requiring low forward voltage and fast switching characteristics. The TO-263AB package is standard for power management components needing robust mechanical mounting and heat sinking capabilities.
Direct pin-compatible substitutes within the same family include variants with different voltage ratings such as RBR10NS30 or RBR10NS60, provided the reverse voltage requirements align. Verify that any replacement maintains the 5A current rating and TO-263-3 footprint.