RBR15BM30AFHTL

Overview

The RBR15BM30AFHTL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, housed in a TO-252-3 (DPAK) surface-mount package. It features a dual anode common cathode configuration with a maximum repetitive reverse voltage of 30 V and an average rectified forward current of 15 A. The device exhibits a maximum forward voltage of 510 mV at 7.5 A per anode and a peak forward surge current capability of 100 A. Reverse leakage current is specified at 200 uA, and the component supports a maximum operating junction temperature of +150 °C. It holds AEC-Q101 qualification for automotive reliability.

Feature Summary

• Dual anode common cathode configuration enables efficient power management in multi-rail or bridge applications.
• Automotive-grade construction ensures high reliability and thermal stability under demanding operational conditions.
• Low forward voltage drop characteristics contribute to improved energy efficiency and reduced heat generation.

Applications

• Switching power supplies requiring robust rectification
• Automotive electronic systems compliant with AEC-Q101 standards
• Freewheeling diode circuits in DC-DC converters

Procurement Notes

Verify the complete part number including the suffix to confirm packaging type and tape specifications. Confirm that the required quantity aligns with the manufacturer's standard reel size. Ensure compatibility with surface-mount assembly processes suitable for the TO-252-3 footprint. Check for any specific handling requirements related to electrostatic discharge sensitivity during storage and installation.

Selection Notes

Select this component when a 30 V rating and 15 A continuous current capacity are required in a compact DPAK package. The dual anode design offers flexibility for parallel operation or bridge configurations. Consider the 150 °C junction temperature limit for high-temperature environments. Verify that the 510 mV forward voltage meets the efficiency targets of the specific power conversion topology.

Part Context

This device belongs to ROHM's RBR series of high-efficiency Schottky barrier diodes designed for automotive and industrial applications. The series emphasizes low forward voltage and low reverse leakage current to optimize power loss. The TO-252-3 package provides a balance between current handling capability and board space efficiency compared to larger through-hole alternatives.

Replacement Considerations

The RBR15BM30AFH is listed as a similar level replacement with the same pinout and package. Verify that the non-HTL variant meets all electrical and environmental specifications required for the application before substitution.

FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is +150 °C.

Is this component qualified for automotive applications?

Yes, the RBR15BM30AFHTL is AEC-Q101 qualified.

What is the peak forward surge current rating?

The device can withstand a peak forward surge current of 100 A.