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The RBR20BGE60ATL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, housed in a TO-252-3 (DPAK) surface-mount package. It features a dual anode common cathode configuration with a maximum repetitive reverse voltage of 60 V and an average forward current rating of 20 A. The device exhibits a low forward voltage of 590 mV at 10 A and supports a surge current of 100 A. Operating temperatures range from -55°C to +150°C junction temperature.
Verify the specific suffix 'ATL' against the official datasheet to confirm reel packaging and tape-and-reel specifications. Ensure the component matches the required RoHS compliance status for your assembly process. Cross-reference the manufacturer part number directly with authorized distributors to avoid counterfeit components. Confirm lead times and production cycles prior to finalizing procurement plans.
Select this component when a dual common cathode topology is required within a compact DPAK footprint. The 60 V rating suits low-voltage DC systems, while the 20 A current capacity handles moderate load requirements. Consider the 590 mV forward drop for thermal management calculations in high-efficiency designs requiring minimal conduction losses.
This part belongs to ROHM's RBR series of Schottky barrier diodes designed for general-purpose rectification. The series emphasizes low forward voltage characteristics to enhance energy efficiency in modern electronic devices. The TO-252 package provides robust thermal performance suitable for surface-mount assembly processes commonly used in consumer and industrial electronics manufacturing.
The RBR10BM60A is listed as a similar level replacement with the same pinout and package. Verify that the lower 10 A current rating meets the application requirements before substitution.