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The RBR20NS30AFHTL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, designed for high-reliability automotive applications. It features a dual anode common cathode configuration housed in a TO-263S (D2PAK) surface-mount package. Key electrical parameters include a maximum repetitive reverse voltage of 30 V and an average rectified forward current of 20 A. The device exhibits a low forward voltage of 550 mV at 10 A and supports a forward surge current of 100 A. It operates with a maximum junction temperature of +150 °C and meets the AEC-Q101 qualification standard.
Verify the specific suffix HTL to confirm tape-and-reel packaging format when ordering. Ensure the component meets AEC-Q101 requirements for your target automotive application. Cross-reference the TO-263S package dimensions with your PCB layout constraints. Confirm that the 30 V rating aligns with your system's voltage headroom needs before finalizing procurement.
Select this component when a 30 V rated Schottky diode with 20 A continuous current capability is required in a D2PAK package. The low forward voltage makes it suitable for efficiency-critical designs. Consider the dual common cathode structure if multiple rectification paths are needed within a single footprint. Verify thermal management capabilities given the 150 °C maximum junction temperature limit.
This part belongs to ROHM's RBR series of automotive-grade Schottky barrier diodes. The series is characterized by high reliability and low forward voltage, specifically engineered for demanding automotive environments. The RBR20NS30AFHTL variant offers a balance of current handling and voltage blocking suitable for various power conversion stages in vehicle electronics.
The alias RBR20NS30AFH refers to the same device family but may differ in packaging or suffix specifications. Verify compatibility with existing board layouts and ensure equivalent AEC-Q101 certification when substituting.