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The RBR20NS40AFHTL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, designed for automotive applications. It features a dual anode common cathode configuration in a TO-263S (D2PAK) surface-mount package. Key electrical parameters include a 40V repetitive peak reverse voltage and a 40A average rectified forward current. The device exhibits a maximum forward voltage of 550mV at 10A and supports a 100A forward surge current. It operates with a junction temperature up to +150°C and complies with AEC-Q101 standards.
Verify the specific suffix HTL against official datasheets to confirm tape-and-reel packaging requirements. Ensure the ordering part number matches the exact voltage and current ratings required for the target application. Cross-reference the manufacturer's latest documentation to confirm RoHS compliance status and any potential obsolescence notices before finalizing procurement plans.
Select this component when a dual common cathode Schottky diode is required for automotive environments. The TO-263S package provides robust thermal performance for high-current applications. Consider the 40V rating and 40A continuous current capacity to ensure adequate headroom for the specific circuit design constraints.
This component belongs to the RBR series of Schottky barrier diodes from ROHM Semiconductor. The series is characterized by low forward voltage and high reliability, specifically engineered for automotive electronics. The RBR20NS40AFHTL variant offers a balance of voltage blocking and current handling within a standard D2PAK footprint.
Check for direct substitutes such as the RBR20NS40AFH or other variants within the same RBR family that share identical pinouts and electrical specifications. Verify compatibility with existing PCB layouts and thermal management solutions before substitution.