RBR30T30ANZC9

Overview

The RBR30T30ANZC9 is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, designed for through-hole mounting in the TO-220FN-3 package. It features a dual anode common cathode configuration with a maximum repetitive reverse voltage of 30 V and an average forward current rating of 30 A. The device exhibits a low forward voltage of 550 mV at 10 A and a maximum reverse current of 300 uA at 30 V. It supports a forward surge current of 100 A and operates at junction temperatures up to +150 C.

Feature Summary

• Dual anode common cathode configuration for bridge rectifier applications
• Low forward voltage characteristic for improved efficiency
• High reliability construction suitable for industrial environments

Applications

• AC-DC converter circuits
• Bridge rectifier configurations
• General purpose power supply designs

Procurement Notes

Verify the complete part number including the suffix C9 to ensure correct packaging and compliance specifications. Confirm that the TO-220FN-3 package aligns with thermal management requirements. Check RoHS status details as indicated in official documentation before finalizing procurement orders.

Selection Notes

Select this component when a high-current Schottky solution is required in a through-hole format. The dual anode setup simplifies PCB layout for full-wave rectification. Ensure the 30 V rating accommodates peak inverse voltage transients in the target circuit design.

Part Context

This device belongs to ROHM's RBR series of Schottky barrier diodes, which are engineered for low forward voltage drop and high reliability. The series targets general-purpose rectification needs where efficiency and thermal performance are critical factors in power conversion systems.

Replacement Considerations

The part number alias RBR30T30ANZ refers to the same functional device without the specific packaging suffix. Verify package compatibility if substituting between variants.