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RBV2502 is listed in the Bridge Rectifier range at ChipApex. The manufacturer field lists EIC SEMICONDUCTOR INC.. Its product description is BRIDGE RECT 1P 200V 25A RBV-25. Review the specifications below when checking this part for your BOM.
The RBV2502 is a silicon bridge rectifier from the RBV2500 series, rated for a maximum recurrent peak reverse voltage of 200 V and a maximum average forward current of 25 A at a case temperature of 55°C. It features a peak forward surge current capability of 300 A and a typical thermal resistance of 1.45 °C/W. The device exhibits a maximum forward voltage drop of 1.1 V at 12.5 A and operates within a junction temperature range of -40 to +150°C.
Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm RoHS compliance status as indicated in documentation. Ensure proper handling procedures are followed during storage and installation to maintain performance integrity.
Select this component based on required reverse voltage ratings and thermal management needs. Consider derating factors for capacitive loads and ambient temperature conditions. Evaluate mounting torque requirements and verify compatibility with existing PCB layouts and heat sink configurations.
This part belongs to the RBV2500 series of silicon bridge rectifiers manufactured by EIC Semiconductor Inc. The series covers various voltage ratings from 50 V to 1000 V while maintaining a consistent 25 A current rating. These components are designed for robust performance in demanding electronic applications.
Compatible substitutes include RBV2500, RBV2501, RBV2504, RBV2506, RBV2508, and RBV2510 from the same series. Verify electrical parameters match specific application requirements before substitution.
The maximum DC blocking voltage is 200 V.
It supports a peak forward surge current of 300 A under JEDEC method conditions.
Yes, it operates within a junction temperature range of -40 to +150°C.
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