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RBV2506 is listed in the Bridge Rectifier range at ChipApex. The manufacturer field lists EIC SEMICONDUCTOR INC.. Its product description is BRIDGE RECT 1P 600V 25A RBV-25. Review the specifications below when checking this part for your BOM.
The RBV2506 is a silicon bridge rectifier diode from the RBV25 series, rated for a maximum repetitive peak reverse voltage of 600 V and a maximum average forward current of 25 A at a case temperature of 55°C. It features a peak forward surge current capability of 300 A under JEDEC method conditions. The device exhibits a maximum forward voltage drop of 1.1 V at 12.5 A and a typical thermal resistance of 1.45 °C/W. Operating junction and storage temperatures range from -40°C to +150°C.
Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm RoHS compliance status as indicated in product documentation. Ensure proper handling procedures are followed during installation to maintain electrical integrity and mechanical stability.
Select this component when a 600 V reverse voltage rating and 25 A continuous current capacity are required. Consider the 1.45 °C/W thermal resistance for heat sink design calculations. Verify that the operating environment stays within the specified -40°C to +150°C temperature range for reliable performance.
This part belongs to the RBV25 series of silicon bridge rectifiers manufactured by EIC Semiconductor Inc. The series covers voltage ratings from 50 V to 1000 V while maintaining a consistent 25 A current rating across all variants. The RBV2506 specifically addresses applications requiring 600 V blocking capability.
Direct replacements include Vishay VS-RBV2506 and Taiwan Semiconductor RBV2506. Verify pinout compatibility and thermal resistance values before substitution. Ensure replacement parts meet the same 2000 VAC isolation rating requirement.
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