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RD3N045ATTL1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is PCH -80V -4.5A, TO-252 (DPAK), P. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for RD3N045ATTL1
- Description：PCH -80V -4.5A, TO-252 (DPAK), P
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：4.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：650mOhm @ 2.25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：5.9 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：205 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：17W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Single FETs, MOSFETs datasheet and documents for RD3N045ATTL1
Single FETs, MOSFETs Overview
The RD3N045ATTL1 is a P-Channel enhancement mode MOSFET manufactured by ROHM Semiconductor. It features an 80 V drain-source breakdown voltage and a continuous drain current of 4.5 A at case temperature. The device utilizes a TO-252-3 surface-mount package with a maximum power dissipation of 17 W. Key electrical characteristics include a gate-source voltage rating of ±20 V, a threshold voltage of -3 V, and a gate charge of 16 nC. Operating temperatures range from -55 °C to +150 °C.
Single FETs, MOSFETs Feature Summary
- P-Channel single transistor configuration for high-side switching applications
- Enhancement mode operation with low gate drive requirements
- Surface-mount construction in a compact TO-252-3 package
Single FETs, MOSFETs Applications
- Power management circuits
- Motor driver interfaces
- Load switch implementations
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix TL1 against official ROHM documentation to confirm reel specifications and tape-and-reel dimensions. Ensure compatibility with standard SMD assembly processes for the TO-252-3 footprint. Cross-reference datasheet revisions to confirm thermal resistance values and absolute maximum ratings prior to final design approval.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring a P-Channel MOSFET with an 80 V voltage rating and moderate current handling capabilities. The TO-252-3 package offers a balance between thermal performance and board space efficiency. Verify that the required gate drive voltage aligns with the specified threshold and on-resistance characteristics for optimal switching performance.
Single FETs, MOSFETs Part Context
This part belongs to the ROHM RD3N series of P-Channel MOSFETs. These devices are designed for general-purpose power switching applications. The series provides various voltage and current ratings within standardized packages to facilitate design flexibility across different power supply and motor control architectures.
Single FETs, MOSFETs Replacement Considerations
Check for direct pin-compatible substitutes within the same ROHM family or equivalent third-party components offering matching 80 V P-Channel specifications and TO-252-3 packaging. Verify thermal and electrical parameters before substitution.
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