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The RFN20T2DNZC9 is an ultra-fast recovery diode manufactured by ROHM Semiconductor, designed for high-efficiency power conversion applications. It features a cathode-common dual configuration housed in a TO-220FN (3-pin) leaded package. Key electrical specifications include a maximum repetitive peak reverse voltage of 200 V and an average rectified forward current rating of 20 A. The device exhibits a typical forward voltage of 0.98 V at 5 A and a maximum reverse leakage current of 10 µA at 200 V. With a fast reverse recovery time of 25 ns, it minimizes switching losses. The component supports a maximum operating junction temperature of 150 °C and complies with RoHS standards.
Verify the complete part number including the suffix C9 against official ROHM documentation to ensure correct packaging and compliance status. Confirm that the TO-220FN package dimensions match your PCB footprint requirements. Check for any specific handling instructions related to the leaded package type during assembly.
Select this component when a dual diode solution is required for 200 V applications with high current demands. The 25 ns recovery time makes it suitable for frequencies where standard recovery diodes would incur excessive losses. Ensure the thermal management design accommodates the 150 °C junction temperature limit under expected load conditions.
This device belongs to ROHM's RFN series of ultra-fast recovery diodes, which are engineered for high-speed switching applications. The series offers various current ratings and voltage classes, providing designers with options for optimizing efficiency in power supply designs. The RFN20T2DNZC9 specifically targets the 20 A segment of this portfolio.
Publicly confirmed substitute part numbers for RFN20T2DNZC9 were not found in the provided source material. Verify compatibility with alternative components by matching electrical parameters such as VRM, IO, trr, and package type through official manufacturer cross-reference tools.