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The RGCL60TS60DGC11 is a Field Stop Trench IGBT manufactured by ROHM Semiconductor, featuring an integrated Fast Recovery Diode (FRD). It operates with a collector-emitter voltage of 600V and supports a continuous collector current of 30A at 100°C. The device utilizes a TO-247N package for through-hole mounting. Key electrical characteristics include a typical collector-emitter saturation voltage of 1.4V and a maximum power dissipation of 111W at 25°C case temperature. The component is designed for soft switching applications and complies with RoHS standards.
Verify the specific ordering suffix against the official datasheet to ensure correct packaging and marking specifications. Confirm that the procurement channel provides genuine components from ROHM Semiconductor or authorized distributors. Check for compliance with environmental directives such as RoHS requirements before finalizing orders.
Select this component for designs requiring low conduction losses and fast recovery diodes within a 600V rating. Ensure thermal management strategies account for the 111W power dissipation limit at 25°C case temperature. Verify gate drive conditions align with the specified VGE thresholds for optimal switching performance.
This part belongs to the RGCL series of Field Stop Trench IGBTs from ROHM. It is specifically engineered for applications demanding low VCE(sat) and efficient soft switching. The integration of a high-performance FRD makes it suitable for inductive load switching and power factor correction circuits.
Consult the official datasheet for direct pin-compatible alternatives within the same voltage and current ratings. Verify thermal resistance and package dimensions when substituting with other manufacturers' parts to ensure mechanical fit.