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Product Detailed Parameters
- Description：5S SHORT-CIRCUIT TOLERANCE, 650V
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：102 A
- Current - Collector Pulsed (Icm)：225 A
- Vce(on) (Max) @ Vge, Ic：2.05V @ 15V, 75A
- Power - Max：306 W
- Switching Energy：3.63mJ (on), 1.74mJ (off)
- Input Type：Standard
- Gate Charge：162 nC
- Td (on/off) @ 25°C：69ns/210ns
- Test Condition：400V, 75A, 10Ohm, 15V
- Reverse Recovery Time (trr)：226 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247GE
- Grade：-
- Qualification：-
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Overview
The RGEX5TS65DGC13 is a single Field Stop Trench IGBT manufactured by ROHM Semiconductor, housed in a TO-247GE through-hole package. It features a collector-emitter maximum voltage (VCEO) of 650 V and a continuous collector current (Ic) of 75 A at 25°C. The device has a typical collector-emitter saturation voltage of 1.9 V and supports a short-circuit withstand time of 5 µs. Power dissipation is rated at 306 W, with an operating temperature range from -40°C to +175°C.
Feature Summary
- Integrates a built-in fast recovery diode for enhanced switching performance
- Features low collector-emitter saturation voltage to reduce conduction losses
- Supports 5 µs short-circuit withstand capability for robust operation
Applications
- Inverter circuits
- Welding equipment power stages
- Industrial motor drives
Procurement Notes
Verify the specific suffix GC13 against the official datasheet to confirm tube packaging and lead plating specifications. Confirm RoHS compliance status directly with the manufacturer or authorized distributors prior to procurement. Ensure thermal management solutions align with the 306 W power dissipation rating for reliable long-term operation.
Selection Notes
Select this component when a 650 V rating and 75 A continuous current are required in a TO-247GE package. The 5 µs short-circuit tolerance makes it suitable for applications demanding high fault protection. Consider the integrated FRD characteristics if synchronous rectification or freewheeling paths are needed within the same package.
Part Context
This part belongs to ROHM's Field Stop Trench IGBT series designed for inverter applications. It combines trench gate technology for low switching loss with field stop structures for reduced saturation voltage. The integration of a fast recovery diode simplifies circuit design by eliminating the need for external parallel diodes in many topologies.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-referencing requires matching electrical parameters such as 650 V VCEO, 75 A Ic, TO-247GE package, and 5 µs short-circuit tolerance.
