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Product Detailed Parameters
- Description：IGBT TRENCH FS 1200V 50A TO-247N
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：50 A
- Current - Collector Pulsed (Icm)：75 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 25A
- Power - Max：395 W
- Switching Energy：1.4mJ (on), 1.65mJ (off)
- Input Type：Standard
- Gate Charge：67 nC
- Td (on/off) @ 25°C：37ns/140ns
- Test Condition：600V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr)：182 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247N
- Grade：-
- Qualification：-
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Overview
The RGS50TSX2DGC11 is a single N-channel Field Stop Trench IGBT manufactured by ROHM Semiconductor. It features an integrated Fast Recovery Diode (FRD) and supports a short-circuit tolerance of 10 µs. The device operates with a collector-emitter voltage of 1200 V and a continuous collector current of 25 A at 100°C. Key electrical parameters include a typical saturation voltage of 1.7 V, a minimum breakdown voltage of 1200 V, and a power dissipation rating of 395 W. Switching characteristics specify a typical turn-off time of 205 ns. The component is housed in a TO-247N package and functions within a junction temperature range of -55°C to 175°C.
Feature Summary
- Field Stop Trench structure for low conduction loss
- Integrated FRD for simplified circuit design
- 10 µs short-circuit withstand capability
Applications
- General-purpose inverters
- Uninterruptible Power Supplies (UPS)
- Photovoltaic (PV) inverters
- Power conditioning systems
Procurement Notes
Verify the specific suffix 'C11' against the manufacturer's latest datasheet to confirm packaging details and compliance status. Ensure the ordering quantity aligns with the tube packaging configuration specified in official documentation. Cross-reference the part number with authorized distributors to confirm availability and lead times prior to finalizing procurement plans.
Selection Notes
Select this component for applications requiring high reliability under fault conditions due to its 10 µs short-circuit tolerance. The integrated FRD reduces component count compared to discrete diode solutions. Verify that the thermal management system can handle the 395 W power dissipation rating at the expected operating ambient temperature.
Part Context
This part belongs to the RGS series of IGBTs designed for inverter applications. The series emphasizes low on-state losses to support miniaturization and efficiency improvements in power conversion equipment. It utilizes silicon technology within a robust TO-247N package suitable for through-hole mounting.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Consult the manufacturer's official replacement guide or contact technical support for qualified alternatives if this component is no longer recommended for new designs.
