RGT16TM65DGC9

RGT16TM65DGC9

$2.86
  • Description:IGBT TRENCH FS 650V 9A TO-220NFM
  • Series:-

SKU:09d3e21ee7a6 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:IGBT TRENCH FS 650V 9A TO-220NFM
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tube
  • IGBT Type:Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max):650 V
  • Current - Collector (Ic) (Max):9:00 AM
  • Current - Collector Pulsed (Icm):24 A
  • Vce(on) (Max) @ Vge, Ic:2.1V @ 15V, 8A
  • Power - Max:22 W
  • Switching Energy:-
  • Input Type:Standard
  • Gate Charge:21 nC
  • Td (on/off) @ 25°C:13ns/33ns
  • Test Condition:400V, 8A, 10Ohm, 15V
  • Reverse Recovery Time (trr):42 ns
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3 Full Pack
  • Supplier Device Package:TO-220NFM
  • Grade:-
  • Qualification:-

Download product information

RGT16TM65DGC9

Overview

The RGT16TM65DGC9 is a single N-channel Field Stop Trench IGBT manufactured by ROHM Semiconductor. It features an integrated Fast Recovery Diode (FRD) and supports a short-circuit tolerance of 5 µs. The device operates with a maximum collector-emitter voltage of 650 V and a continuous collector current of 16 A at 25°C. Key electrical parameters include a typical collector-emitter saturation voltage of 2.1 V, a gate-emitter leakage current of 200 nA, and a power dissipation rating of 94 W. It utilizes a TO-220NFM-3 through-hole package and functions within a temperature range of -40°C to +175°C.

Feature Summary

  • Field Stop Trench structure for low saturation voltage and switching loss
  • Integrated fast recovery diode with soft recovery characteristics
  • 5 µs short-circuit withstand capability for robust protection

Applications

  • Inverter circuits
  • Motor drive systems
  • Switching power supplies

Procurement Notes

Verify the specific suffix GC9 against official datasheets to confirm pinout and packaging details. Confirm RoHS compliance status via manufacturer documentation before integration. Ensure thermal management aligns with the 94 W dissipation rating in the TO-220NFM package.

Selection Notes

Select this component for applications requiring 650V blocking capability and 16A continuous current handling. The 5µs short-circuit tolerance makes it suitable for inverter designs needing fault protection. Compare saturation voltage and switching times against alternative trench IGBTs for optimal efficiency.

Part Context

This part belongs to the RGT series of Field Stop Trench IGBTs from ROHM. It shares architectural similarities with other models like the RGT16NS65DGC9 but differs in package type. The series is designed for high-efficiency power conversion with built-in FRDs.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with existing circuit designs before considering any cross-references.

RGT16TM65DGC9RGT16TM65DGC9
$2.86
Buy Now