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The RGT16TM65DGC9 is a single N-channel Field Stop Trench IGBT manufactured by ROHM Semiconductor. It features an integrated Fast Recovery Diode (FRD) and supports a short-circuit tolerance of 5 µs. The device operates with a maximum collector-emitter voltage of 650 V and a continuous collector current of 16 A at 25°C. Key electrical parameters include a typical collector-emitter saturation voltage of 2.1 V, a gate-emitter leakage current of 200 nA, and a power dissipation rating of 94 W. It utilizes a TO-220NFM-3 through-hole package and functions within a temperature range of -40°C to +175°C.
Verify the specific suffix GC9 against official datasheets to confirm pinout and packaging details. Confirm RoHS compliance status via manufacturer documentation before integration. Ensure thermal management aligns with the 94 W dissipation rating in the TO-220NFM package.
Select this component for applications requiring 650V blocking capability and 16A continuous current handling. The 5µs short-circuit tolerance makes it suitable for inverter designs needing fault protection. Compare saturation voltage and switching times against alternative trench IGBTs for optimal efficiency.
This part belongs to the RGT series of Field Stop Trench IGBTs from ROHM. It shares architectural similarities with other models like the RGT16NS65DGC9 but differs in package type. The series is designed for high-efficiency power conversion with built-in FRDs.
Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with existing circuit designs before considering any cross-references.