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The RGTH00TS65DGC13 is a single-channel Silicon IGBT from ROHM Semiconductor, housed in a TO-247GE-3 through-hole package. It features a collector-emitter breakdown voltage of 650 V and a continuous collector current of 85 A at 25°C. The device exhibits a typical collector-emitter saturation voltage of 2.1 V and supports a maximum power dissipation of 277 W. Operating within a temperature range of -40°C to +175°C, it includes an integrated fast recovery diode with a short-circuit withstand time of 5 µs.
Verify the specific suffix against official ROHM documentation to confirm pinout and electrical tolerances. Confirm RoHS compliance status via the manufacturer's latest datasheet revision. Ensure thermal management design accounts for the specified 277 W power dissipation limit under actual operating conditions.
Select this component for applications requiring robust short-circuit protection and high current handling in a standard through-hole form factor. Compare the 2.1 V saturation voltage against system efficiency targets. Verify that the 5 µs short-circuit withstand time aligns with the protection circuitry response speed in the target design.
This part belongs to the RGTH series, designed specifically for inverter applications. It combines low conduction losses with high reliability. The TO-247GE-3 package provides efficient heat dissipation for medium-power industrial systems.
Check for direct cross-references in ROHM's product change notification documents. Verify pin compatibility and electrical parameter equivalence before substituting with other 650V IGBTs.