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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 70A TO-247N
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：70 A
- Current - Collector Pulsed (Icm)：160 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 40A
- Power - Max：234 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：79 nC
- Td (on/off) @ 25°C：34ns/120ns
- Test Condition：400V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr)：58 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247N
- Grade：-
- Qualification：-
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Overview
The RGTH80TS65DGC11 is a single N-channel IGBT from ROHM Semiconductor, utilizing Trench Field Stop technology. It features a collector-emitter breakdown voltage of 650 V and a continuous collector current of 40 A at 25°C. The device has a typical saturation voltage of 1.5 V and a power dissipation rating of 194 W. It includes an integrated fast recovery diode with a reverse recovery time of 34 ns. Packaged in a TO-247N-3 through-hole case, it operates within a junction temperature range of -40°C to +175°C.
Feature Summary
- Trench Field Stop structure for low saturation voltage and high-speed switching
- Integrated fast recovery diode with soft recovery characteristics
- High short-circuit tolerance capability
- Lead-free plating compliant with RoHS standards
Applications
- Power Factor Correction (PFC) circuits
- Solar inverters
- Uninterruptible Power Supplies (UPS)
- Industrial welding equipment
- Induction Heating (IH) appliances
Procurement Notes
Verify the specific suffix 'GC11' against the manufacturer's latest datasheet to confirm pinout and packaging details. Ensure the component meets required thermal management specifications for the intended application. Check for any recent product change notifications that may affect electrical parameters or availability status before finalizing procurement plans.
Selection Notes
Select this component for applications requiring high efficiency and fast switching speeds at 650 V. Consider the 1.5 V saturation voltage for conduction loss optimization. Verify gate drive requirements match the specified voltage limits. Evaluate thermal resistance values against the heatsink design to ensure operation within the 175°C maximum junction temperature limit under expected load conditions.
Part Context
This part belongs to ROHM's RGTH series of high-speed switching IGBTs. It shares the Trench Field Stop architecture with other models in the family but offers specific current and voltage ratings tailored for medium-power industrial and consumer electronics applications. The TO-247N package provides robust mechanical stability for through-hole mounting.
Replacement Considerations
Direct substitutes include the RGW80TS65DGC11 and RGTH40TS65GC11, though current ratings differ. Verify compatibility with existing gate drivers and thermal designs when transitioning between these variants. Consult official substitution guides for detailed parameter comparisons.
