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The RGTVX6TS65DGC13 is a Field Stop Trench IGBT manufactured by ROHM Semiconductor, housed in a TO-247GE package. It features a collector-emitter voltage (VCES) of 650V and a continuous collector current (IC) of 80A at 100°C. The typical collector-emitter saturation voltage (VCE(sat)) is 1.5V at 25°C. Power dissipation reaches 404W at 25°C case temperature. The device includes a built-in fast recovery diode with a reverse recovery time (tf) of 34ns. Short circuit withstand time is rated at 2µs.
Verify the specific ordering code suffix C13 to confirm tube packaging and lead plating specifications. Ensure the component matches the marking RGTVX6TS65D on the physical unit. Confirm RoHS compliance status directly with the manufacturer or authorized distributor before finalizing procurement orders for production integration.
Select this component for applications requiring high-speed switching capabilities combined with robust short-circuit tolerance. The 2µs withstand time supports demanding inverter topologies. Evaluate thermal resistance values against system heat sink designs to maintain junction temperatures within the specified -40°C to +175°C operating range during continuous operation.
This part belongs to the RGTV series of ROHM's Field Stop Trench IGBT lineup. The series is engineered to balance low conduction losses with rapid switching performance. It utilizes trench gate technology to minimize saturation voltage while maintaining high breakdown voltage integrity suitable for general industrial power conversion systems.
No public confirmed substitute part numbers are available in the provided documentation. Verify pinout compatibility and electrical ratings if considering alternative manufacturers' components for retrofitting existing designs.