— IC芯片 | 连接器 | 传感器 | 被动器件 —
Product Detailed Parameters
- Description:ABU / MOSFET
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR),Cut Tape (CT)
- Switch Type:General Purpose
- Number of Outputs:1
- Ratio - Input:Output:1:01
- Output Configuration:-
- Output Type:P-Channel
- Interface:On/Off
- Voltage - Load:-3.5V ~ -12V
- Voltage - Supply (Vcc/Vdd):Not Required
- Current - Output (Max):40A
- Rds On (Typ):26mOhm
- Input Type:Non-Inverting
- Features:Latch Function
- Fault Protection:Current Limiting (Fixed), Over Temperature
- Operating Temperature:150°C
- Mounting Type:Surface Mount
- Supplier Device Package:LDPAK
- Package / Case:SC-83
- Grade:-
- Qualification:-
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Overview
The RJE0601JPE-00#J3 is a P-channel silicon MOSFET from Renesas Electronics, designed for power switching applications. It operates with a drain-source voltage of 60V and supports continuous current handling capabilities suitable for industrial and automotive environments. The component features a latch-type shutdown function and is qualified under the AEC-Q101 standard for automotive reliability. Housed in an SC-83 package, it integrates protection circuits to enhance system safety during fault conditions.
Feature Summary
- Integrates a built-in over-temperature shut-down circuit that monitors junction temperature to prevent damage during high power consumption or over-current events.
- Features a latch-type shutdown operation requiring zero voltage recovery to reset after a fault condition occurs.
- Includes a built-in current limitation circuit to protect against short-circuit scenarios and ensure high endurance capability.
Applications
- Industrial power management systems
- Automotive electronic control units
- Power supply voltage regulation
Procurement Notes
Verify the specific suffix J3 indicates the tape and reel packaging configuration as documented by the manufacturer. Confirm the SC-83 package designation matches your PCB footprint requirements. Ensure the component meets the required AEC-Q101 qualification level for your target application environment before finalizing procurement specifications.
Selection Notes
Select this component when a P-channel MOSFET with integrated thermal and current protection is required. The latch-type shutdown feature necessitates careful circuit design to manage recovery states. Verify that the 60V rating aligns with the maximum operating voltage of the load. Consider the SC-83 package constraints for thermal dissipation and mounting density in the final assembly.
Part Context
This part belongs to Renesas' discrete semiconductor portfolio focusing on power switching solutions. It complements other MOSFET series by offering enhanced protection features within a compact surface-mount form factor. The product line targets robust performance in demanding environments where reliability and fault tolerance are critical operational parameters.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation. Cross-referencing requires matching P-channel topology, 60V rating, latch-shutdown functionality, and SC-83 package dimensions.
FAQ
How does the shutdown mechanism operate?
The device utilizes a latch-type shutdown operation that activates upon detecting over-temperature or over-current conditions. Recovery requires applying zero voltage to the gate.
What protection circuits are integrated?
The component includes a built-in over-temperature shut-down circuit sensing junction temperature and a built-in current limitation circuit for short-circuit protection.
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