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RJE0603JPE-00#J3
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Product Detailed Parameters
- Description：ABU / MOSFET
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR),Cut Tape (CT)
- Switch Type：General Purpose
- Number of Outputs：1
- Ratio - Input:Output：1:01
- Output Configuration：-
- Output Type：P-Channel
- Interface：On/Off
- Voltage - Load：-3.5V ~ -12V
- Voltage - Supply (Vcc/Vdd)：Not Required
- Current - Output (Max)：50A
- Rds On (Typ)：16mOhm
- Input Type：Non-Inverting
- Features：Latch Function
- Fault Protection：Current Limiting (Fixed), Over Temperature
- Operating Temperature：150°C
- Mounting Type：Surface Mount
- Supplier Device Package：LDPAK
- Package / Case：SC-83
- Grade：-
- Qualification：-
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Overview
The RJE0603JPE-00#J3 is a single-channel N-channel power MOSFET manufactured by Renesas Electronics. It utilizes silicon technology and is housed in an SOP-8J surface-mount package. The device features a drain-source breakdown voltage of 60 V and a maximum on-resistance of 270 mOhms at 10 V gate drive. It supports a continuous drain current of 15 A and dissipates up to 2 W of power. The component operates with a gate-source voltage range of -16 V to 2.5 V, exhibits a typical turn-on delay of 1.2 us, and has a maximum operating temperature of +150 C.
Feature Summary
- Single-channel N-channel enhancement mode configuration
- Integrated thermal protection circuitry for over-temperature shutdown
- Logic-level gate drive compatibility
Applications
- Automotive power management systems
- DC-DC converter circuits
- Motor control applications
Procurement Notes
Verify the specific suffix J3 against official Renesas documentation to confirm tape-and-reel packaging specifications. Confirm RoHS compliance status through the manufacturer's latest datasheet. Ensure the part number matches the exact SOP-8J variant required for your PCB footprint design before procurement.
Selection Notes
Select this component when a 60 V N-channel MOSFET with integrated thermal protection is required in a compact SOP-8J package. Evaluate the 270 mOhm on-resistance against system efficiency targets. Consider the 15 A current rating and 2 W power dissipation limits relative to the expected thermal environment and heat sinking capabilities of the final assembly.
Part Context
This part belongs to the Renesas Thermal FET series, which integrates protection functions directly into the power transistor die. These devices are designed for automotive and industrial applications requiring high reliability and simplified system design by combining power switching with built-in safety mechanisms.
Replacement Considerations
Consult the official Renesas cross-reference guide for verified substitute part numbers. Do not assume functional equivalence based solely on electrical parameters; verify pinout and thermal protection behavior.
