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RJE0607JSP-00#J0
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Product Detailed Parameters
- Description：ABU / MOSFET
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR),Cut Tape (CT)
- Switch Type：General Purpose
- Number of Outputs：2
- Ratio - Input:Output：1:01
- Output Configuration：-
- Output Type：P-Channel
- Interface：On/Off
- Voltage - Load：-3.5V ~ -12V
- Voltage - Supply (Vcc/Vdd)：Not Required
- Current - Output (Max)：1.5A
- Rds On (Typ)：185mOhm
- Input Type：Non-Inverting
- Features：Latch Function
- Fault Protection：Current Limiting (Fixed), Over Temperature
- Operating Temperature：150°C
- Mounting Type：Surface Mount
- Supplier Device Package：8-SOP
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Grade：-
- Qualification：-
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Overview
The RJE0607JSP-00#J0 is a dual P-channel power MOSFET manufactured by Renesas Electronics. It features a 60V drain-source breakdown voltage and supports continuous drain currents up to 1.5A per channel. The device exhibits a typical on-resistance of 350 mΩ, with gate-source voltage ratings of -16V and 2.5V. Power dissipation reaches 1.5W, and the maximum operating temperature is +150°C. Switching characteristics include a rise time of 3.4µs and fall time of 6.3µs. It utilizes an SOP-8 surface-mount package.
Feature Summary
- Integrated over-temperature shutdown circuit with latch-type operation requiring zero voltage for reset
- High endurance capability against short-circuit conditions
- Dual-channel configuration in a compact SOP-8 package
Applications
- Automotive thermal management systems
- Car power distribution units
- General purpose load switching applications
Procurement Notes
Verify component authenticity through authorized Renesas distributors or certified suppliers. Confirm RoHS compliance status via official datasheets. Check current supply availability as stock levels fluctuate. Ensure storage conditions meet moisture sensitivity level requirements before assembly. Validate part markings against manufacturer specifications.
Selection Notes
Select this component for applications requiring robust short-circuit protection and thermal shutdown features. The dual P-channel design simplifies high-side switching circuits. Verify that the 60V rating exceeds peak circuit voltages. Consider the 350mΩ on-resistance for efficiency calculations. Ensure the SOP-8 package fits the PCB layout constraints.
Part Context
This device belongs to Renesas' silicon P-channel MOSFET series designed for power switching. It integrates fault protection mechanisms typically found in automotive-grade components. The SOP-8 packaging facilitates automated surface-mount assembly. It serves as a reliable solution for managing power distribution in demanding environments.
Replacement Considerations
Cross-reference with RJF0609JSP-00#J0 for N-channel alternatives. Verify pin compatibility and electrical parameters before substitution. Consult Renesas documentation for direct replacements within the same product family.
