RJE0609JPD-00#J3

RJE0609JPD-00#J3

$2.84
  • Description:ABU / MOSFET
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:8a019d71565a Category: Brand:

  
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Product Detailed Parameters

  • Description:ABU / MOSFET
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Switch Type:General Purpose
  • Number of Outputs:1
  • Ratio - Input:Output:1:01
  • Output Configuration:-
  • Output Type:P-Channel
  • Interface:On/Off
  • Voltage - Load:-3.5V ~ -12V
  • Voltage - Supply (Vcc/Vdd):Not Required
  • Current - Output (Max):4A
  • Rds On (Typ):102mOhm
  • Input Type:Non-Inverting
  • Features:Latch Function
  • Fault Protection:Current Limiting (Fixed), Over Temperature
  • Operating Temperature:150°C
  • Mounting Type:Surface Mount
  • Supplier Device Package:DPAK-3
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Grade:-
  • Qualification:-

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RJE0609JPD-00#J3

Overview

The RJE0609JPD-00#J3 is a single N-channel enhancement mode MOSFET manufactured by Renesas Electronics. It features a 60V drain-source breakdown voltage and supports a continuous drain current of 20A. The device exhibits a maximum on-resistance of 38 milliohms at 10V gate drive. It is housed in a TO-252-4 (DPAK) surface-mount package with a power dissipation rating of 40W. The component operates up to a maximum junction temperature of +150°C.

Feature Summary

  • High-current capability with 20A continuous drain current rating
  • Low on-resistance for efficient power switching applications
  • Robust thermal performance with 40W power dissipation capacity
  • Surface-mount DPAK packaging for automated assembly

Applications

  • General purpose power switching circuits
  • Load switch implementations
  • DC-DC converter output stages
  • Motor control driver interfaces

Procurement Notes

Verify the specific suffix #J3 against the manufacturer's official datasheet to confirm tape-and-reel packaging specifications. Ensure the ordering part number matches the exact electrical characteristics required for your design, as suffixes may indicate variations in packaging or testing criteria. Cross-reference the Renesas Electronics catalog for the most current availability and lifecycle status before finalizing procurement plans.

Selection Notes

Select this component when a low-voltage, high-current N-channel solution is required in a DPAK package. The 38mOhm on-resistance makes it suitable for applications prioritizing conduction loss reduction. Verify that the gate drive voltage aligns with the specified threshold for optimal performance. Consider the 40W thermal dissipation limit relative to your PCB copper area and ambient operating conditions.

Part Context

This part belongs to the Renesas RJF/RJE series of silicon N-channel MOSFETs designed for power switching. These devices are engineered for general-purpose applications requiring reliable performance in compact surface-mount formats. The series emphasizes low on-resistance and robust thermal handling capabilities for efficient power management in modern electronic systems.

Replacement Considerations

Consult Renesas official documentation for direct pin-compatible substitutes within the same voltage and current ratings. Verify that any alternative component maintains identical package dimensions and thermal characteristics to ensure seamless integration without redesigning the printed circuit board layout.

RJE0609JPD-00#J3RJE0609JPD-00#J3
$2.84
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