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RJE0616JSP-00#J0
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Product Detailed Parameters
- Description：ABU / MOSFET
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR),Cut Tape (CT)
- Switch Type：General Purpose
- Number of Outputs：1
- Ratio - Input:Output：1:01
- Output Configuration：-
- Output Type：P-Channel
- Interface：On/Off
- Voltage - Load：-3.5V ~ -12V
- Voltage - Supply (Vcc/Vdd)：Not Required
- Current - Output (Max)：4A
- Rds On (Typ)：102mOhm
- Input Type：Non-Inverting
- Features：Latch Function
- Fault Protection：Current Limiting (Fixed), Over Temperature
- Operating Temperature：150°C
- Mounting Type：Surface Mount
- Supplier Device Package：8-SOP
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The RJE0616JSP-00#J0 is a dual P-channel power MOSFET manufactured by Renesas Electronics. It utilizes silicon technology and is housed in an SOP-8 surface-mount package. Key electrical parameters include a drain-source breakdown voltage (Vds) of 60 V, a continuous drain current (Id) of 4 A, and a maximum on-resistance (Rds(on)) of 35 mΩ. The device supports a gate-source voltage range of ±20 V and operates at a maximum junction temperature of +150°C with a power dissipation of 1.5 W.
Feature Summary
- Dual P-channel configuration for efficient high-side switching applications
- Low on-resistance to minimize conduction losses
- Enhanced thermal performance suitable for compact designs
Applications
- Power management circuits
- High-side load switches
- Battery protection modules
Procurement Notes
Verify component authenticity through authorized channels due to discontinuation status. Confirm RoHS compliance details via the official datasheet. Check for tariff implications if shipping to specific regions. Ensure storage conditions meet semiconductor handling standards to prevent degradation before installation.
Selection Notes
Select this component for applications requiring dual P-channel switching with moderate current capabilities. Compare Rds(on) and thermal resistance against alternatives if higher efficiency is needed. Verify package compatibility with existing PCB footprints. Consider the 60 V rating for system voltage headroom requirements.
Part Context
This part belongs to Renesas' silicon P-channel MOSFET series designed for power switching. It serves as a discrete solution for controlling power flow in electronic systems. The SOP-8 package offers a balance between thermal performance and board space efficiency for consumer and industrial electronics.
Replacement Considerations
Public sources indicate this product is no longer manufactured. Engineers should consult Renesas for recommended obsolescence replacements or equivalent parts from other manufacturers that match the 60 V, 4 A, SOP-8 specifications.
