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RJF0411JPD-01#J3
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Product Detailed Parameters
- Description：ABU / MOSFET
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR),Cut Tape (CT)
- Switch Type：General Purpose
- Number of Outputs：1
- Ratio - Input:Output：1:01
- Output Configuration：-
- Output Type：N-Channel
- Interface：On/Off
- Voltage - Load：3.5V ~ 12V
- Voltage - Supply (Vcc/Vdd)：Not Required
- Current - Output (Max)：34A
- Rds On (Typ)：29.9mOhm
- Input Type：Non-Inverting
- Features：Latch Function
- Fault Protection：Current Limiting (Fixed), Over Temperature
- Operating Temperature：150°C
- Mounting Type：Surface Mount
- Supplier Device Package：DPAK-3
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The RJF0411JPD-01#J3 is a single N-channel Power MOSFET manufactured by Renesas Electronics. It utilizes silicon technology and is housed in a TO-252-4 surface-mount package. The device features a drain-source breakdown voltage of 40 V and supports a continuous drain current of 34 A. Its maximum on-resistance is specified at 37 mΩ, with a gate-source voltage range of -2.5 V to 16 V. The component handles up to 40 W of power dissipation and operates at temperatures reaching +150°C.
Feature Summary
- N-channel enhancement mode construction for high-current switching applications
- Low on-state resistance optimized for efficient power management
- Thermal FET design within the TO-252-4 package for effective heat dissipation
Applications
- Automotive power distribution systems
- High-current DC-DC converter circuits
- Motor control driver stages
Procurement Notes
Verify the specific suffix #J3 against official Renesas documentation to confirm packaging configuration. Ensure compatibility with standard SMD/SMT assembly processes. Confirm RoHS compliance status through the manufacturer's latest datasheet before integration into production workflows.
Selection Notes
Select this component when a 40 V rating and 34 A continuous current capacity are required in a compact TO-252-4 form factor. Consider the 37 mΩ on-resistance for thermal efficiency in high-load scenarios. Verify that the 40 W power dissipation capability meets the system's thermal management requirements under expected operating conditions.
Part Context
This part belongs to the Renesas RJF series of Thermal FETs, designed specifically for automotive and industrial applications requiring robust power switching. The series emphasizes low on-resistance and high current handling within standardized packages to facilitate reliable performance in demanding electrical environments.
Replacement Considerations
Consult official Renesas substitution guides for verified equivalents. Cross-reference parameters such as Vds, Id, and Rds(on) to ensure functional compatibility without altering circuit performance or thermal characteristics.
