— IC芯片 | 连接器 | 传感器 | 被动器件 —
Product Detailed Parameters
- Description:ABU / MOSFET
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR),Cut Tape (CT)
- Switch Type:General Purpose
- Number of Outputs:1
- Ratio - Input:Output:1:01
- Output Configuration:-
- Output Type:N-Channel
- Interface:On/Off
- Voltage - Load:3.5V ~ 12V
- Voltage - Supply (Vcc/Vdd):Not Required
- Current - Output (Max):20A
- Rds On (Typ):34mOhm
- Input Type:Non-Inverting
- Features:Latch Function
- Fault Protection:Current Limiting (Fixed), Over Temperature
- Operating Temperature:150°C
- Mounting Type:Surface Mount
- Supplier Device Package:DPAK-3
- Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63
- Grade:Automotive
- Qualification:AEC-Q101
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Overview
The RJF0605JPD-01#J3 is an N-channel Thermal FET manufactured by Renesas Electronics. It features a TO-252-4 (DPAK) surface-mount package and utilizes silicon technology. Key electrical parameters include a drain-source breakdown voltage of 60 V, a continuous drain current of 20 A, and a maximum on-resistance of 38 mΩ. The device supports a gate-source voltage range of -2.5 V to 16 V and operates at a maximum junction temperature of +150°C with a power dissipation rating of 40 W.
Feature Summary
- Integrated over-temperature shut-down circuit that senses junction temperature and shuts down the gate voltage during high thermal stress conditions.
- Built-in current limitation circuit designed to protect against excessive power consumption and overcurrent events.
- Latch-type shut-down operation requiring zero voltage recovery after triggering.
Applications
- Automotive domain controllers
- High-current switching applications
- Power supply systems operating at 12 V or 24 V
Procurement Notes
Verify the specific suffix #J3 for packaging configuration details. Confirm RoHS compliance status through official documentation. Ensure the TO-252-4 footprint matches PCB design requirements. Check automotive qualification levels if used in safety-critical circuits.
Selection Notes
Select this component for applications requiring integrated thermal protection and current limiting within a DPAK package. Consider the 38 mΩ on-resistance for efficiency calculations. Verify gate drive compatibility with logic-level operation requirements. Evaluate thermal management needs based on the 40 W power dissipation rating.
Part Context
This part belongs to the RJF series of N-channel Thermal FETs from Renesas Electronics. These devices are specifically engineered for automotive and industrial applications where robust protection against short circuits and overheating is essential. The series integrates control logic directly with the power MOSFET structure.
Replacement Considerations
Consult official cross-reference lists for verified substitutes. Ensure replacement parts match the TO-252-4 package and maintain equivalent thermal protection features. Verify pinout compatibility before implementation.
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