— IC芯片 | 连接器 | 传感器 | 被动器件 —
Product Detailed Parameters
- Description:ABU / MOSFET
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR),Cut Tape (CT)
- Switch Type:General Purpose
- Number of Outputs:1
- Ratio - Input:Output:1:01
- Output Configuration:-
- Output Type:N-Channel
- Interface:On/Off
- Voltage - Load:3.5V ~ 12V
- Voltage - Supply (Vcc/Vdd):Not Required
- Current - Output (Max):30A
- Rds On (Typ):30mOhm
- Input Type:Non-Inverting
- Features:Latch Function
- Fault Protection:Current Limiting (Fixed), Over Temperature
- Operating Temperature:150°C
- Mounting Type:Surface Mount
- Supplier Device Package:LDPAK
- Package / Case:SC-83
- Grade:Automotive
- Qualification:AEC-Q101
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Overview
The RJF0611JPE-00#J3 is an N-channel Thermal FET with a 60V drain-source voltage and 30A continuous current rating. It features a maximum on-resistance of 30mΩ at 10V gate drive and 40mΩ at 4.5V. The device operates in a TO-263/D2PAK package with a power dissipation of 50W. It includes built-in over-temperature shut-down, latch-type shutdown requiring zero-voltage recovery, and current limitation circuits. The component is AEC-Q101 compliant for automotive applications.
Feature Summary
- Built-in over-temperature shut-down circuit sensing junction temperature to protect against high power consumption or over-current conditions.
- Logic level operation supporting 4V gate drive for efficient control.
- High endurance capability against short-circuit events combined with built-in current limitation.
- Latch-type shut-down operation that requires zero-voltage recovery to reset.
Applications
- Automotive power supply systems operating at 12V and 24V
- Power switching circuits requiring thermal protection
- Applications demanding high short-circuit endurance
Procurement Notes
Verify the specific ordering suffix -00#J3 to confirm the tape-and-reel packaging configuration and lead-free status. Ensure compatibility with the LDPAK(S)-(1) footprint dimensions during PCB layout. Confirm AEC-Q101 qualification requirements are met for the target automotive environment before finalizing procurement specifications.
Selection Notes
Select this component when logic-level gate drive at 4V is required alongside robust thermal management. The integrated shut-down circuit eliminates the need for external temperature monitoring sensors. Choose this part for designs prioritizing short-circuit resilience and simplified protection schemes in automotive-grade power applications.
Part Context
This device belongs to the Renesas Thermal FETs series, designed specifically for automotive reliability. It integrates protection functions directly into the gate area, distinguishing it from standard discrete MOSFETs. The series targets high-endurance applications where junction temperature sensing provides critical system safety.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout and thermal characteristics if considering alternative devices from other manufacturers.
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