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RJF0619JPD-00#J3
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Product Detailed Parameters
- Description：ABU / MOSFET
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR),Cut Tape (CT)
- Switch Type：General Purpose
- Number of Outputs：1
- Ratio - Input:Output：1:01
- Output Configuration：-
- Output Type：N-Channel
- Interface：On/Off
- Voltage - Load：3.5V ~ 12V
- Voltage - Supply (Vcc/Vdd)：Not Required
- Current - Output (Max)：30A
- Rds On (Typ)：33mOhm
- Input Type：Non-Inverting
- Features：Latch Function
- Fault Protection：Current Limiting (Fixed), Over Temperature
- Operating Temperature：150°C
- Mounting Type：Surface Mount
- Supplier Device Package：DPAK-3
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The RJF0619JPD-00#J3 is a silicon N-channel MOSFET manufactured by Renesas Electronics. It features a TO-252 (DPAK) surface-mount package with four terminals. Key electrical parameters include a drain-source breakdown voltage of 60 V and a continuous drain current rating of 30 A. The device exhibits a maximum on-resistance of 30 mΩ at room temperature. It operates in enhancement mode with a gate-source threshold voltage of 2.5 V. The component supports a maximum power dissipation of 40 W and functions within an operating temperature range up to +150°C.
Feature Summary
- N-channel silicon construction for power switching applications
- Surface-mount DPAK-4 package design
- Enhancement mode operation logic
Applications
- General purpose power switching circuits
- DC-DC converter implementations
- Motor control driver stages
Procurement Notes
Verify the specific ordering suffix #J3 against official Renesas documentation to confirm packaging details such as reel specifications. Ensure compatibility with standard SMD/SMT assembly processes. Confirm RoHS compliance status through the manufacturer's certified datasheet before finalizing procurement orders.
Selection Notes
Select this component when a 60V N-channel MOSFET with a 30A current capacity is required. The low on-resistance value supports efficient power management in compact designs. Verify that the thermal requirements of the application align with the specified 40W power dissipation limit and the maximum junction temperature capability.
Part Context
This part belongs to the Renesas RJF series of Thermal FETs. These devices are engineered for robust performance in power electronics. The series utilizes silicon technology to provide reliable switching capabilities. The specific model integrates standard MOSFET characteristics within a widely used industry-standard package format.
Replacement Considerations
Consult official cross-reference lists for verified substitutes. Ensure any replacement matches the 60V voltage rating, 30A current handling, and DPAK-4 physical footprint. Verify pinout compatibility and electrical parameter equivalence before implementation.
