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RJF0624JSP-00#J0
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Product Detailed Parameters
- Description：POWER:POWER MOSFETS
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR),Cut Tape (CT)
- Switch Type：General Purpose
- Number of Outputs：1
- Ratio - Input:Output：1:01
- Output Configuration：Low Side
- Output Type：N-Channel
- Interface：-
- Voltage - Load：60V
- Voltage - Supply (Vcc/Vdd)：Not Required
- Current - Output (Max)：3A
- Rds On (Typ)：139mOhm
- Input Type：Non-Inverting
- Features：-
- Fault Protection：Current Limiting (Fixed)
- Operating Temperature：150°C
- Mounting Type：Surface Mount
- Supplier Device Package：8-SOP
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The RJF0624JSP-00#J0 is a single N-channel MOSFET from Renesas Electronics, packaged in an SOP-8 format. It features a drain-source breakdown voltage (Vds) of 60 V and a continuous drain current (Id) of 3 A. The device exhibits a maximum on-resistance (Rds(on)) of 160 mOhms. Gate-source voltage limits are specified between -2.5 V and 16 V. Power dissipation (Pd) is rated at 1.5 W, with a maximum operating temperature of +150°C. Switching characteristics include a typical turn-on delay time of 0.55 µs and a fall time of 3.7 µs.
Feature Summary
- N-channel enhancement mode MOSFET construction
- Integrated thermal protection capabilities
- Surface-mount SOP-8 packaging for compact integration
Applications
- Power distribution switching
- Load management circuits
- General-purpose power control applications
Procurement Notes
Verify the specific suffix #J0 against official Renesas documentation to confirm tape-and-reel packaging specifications. Ensure compatibility with SOP-8 footprint requirements during PCB layout. Cross-reference datasheet parameters such as Rds(on) and thermal resistance with actual application conditions to validate performance margins under load.
Selection Notes
Select this component for applications requiring 60 V blocking capability and 3 A continuous current handling in a small form factor. The low on-resistance supports efficient power switching with minimal conduction losses. Consider the SOP-8 package constraints for thermal management and ensure gate drive voltages remain within the specified -2.5 V to 16 V range for reliable operation.
Part Context
This part belongs to the RJF series of N-channel MOSFETs designed by Renesas Electronics. These devices are engineered for power switching applications, combining high voltage tolerance with low on-state resistance. The SOP-8 package provides a balance between current capacity and board space efficiency, suitable for dense electronic designs.
Replacement Considerations
Consult official Renesas substitution guides for verified alternatives. Generic replacements may differ in thermal characteristics or pinout configurations.
