ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
RJK03M6DPA-WS#J5A is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is N-CHANNEL POWER MOSFET. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for RJK03M6DPA-WS#J5A
- Description：N-CHANNEL POWER MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Single FETs, MOSFETs datasheet and documents for RJK03M6DPA-WS#J5A
Single FETs, MOSFETs Overview
The RJK03M6DPA-WS#J5A is an N-channel single power MOSFET from the Renesas RJK series, housed in a WPAK-8 package. It features a drain-source voltage (VDSS) of 30V and a continuous drain current (ID) of 25A. The device exhibits a maximum on-resistance (RDS(on)) of 6.5mΩ at VGS=10V and 8.4mΩ at VGS=4.5V. Key electrical parameters include a typical gate charge (Qg) of 12nC and input capacitance (Ciss) of 1350pF. Designed for industrial applications, it supports logic-level gate driving at 4.5V with low drive current requirements.
Single FETs, MOSFETs Feature Summary
- Enables high-speed switching with low gate charge to minimize switching losses during transitions.
- Supports direct logic-level control via 4.5V gate drive capability without requiring additional level-shifting circuitry.
- Provides low on-resistance for efficient power handling and reduced conduction losses in load switch applications.
Single FETs, MOSFETs Applications
- Motor driver circuits
- Load switch implementations
- Industrial power management systems
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix WS#J5A against official Renesas documentation to confirm lead-free status and RoHS compliance details. Ensure the WPAK-8 package footprint matches your PCB design guidelines. Cross-reference the part number with the latest datasheet revision to confirm availability status, as previous variants in this series may have different end-of-life statuses.
Single FETs, MOSFETs Selection Notes
Select this component when a 30V N-channel MOSFET with 25A current capacity is required in a compact WPAK-8 package. It is suitable for designs needing low RDS(on) at both 10V and 4.5V gate voltages. Consider its thermal performance in the context of the WPAK-8 package compared to other Renesas options like TOLL or TOLT if higher power dissipation is needed.
Single FETs, MOSFETs Part Context
This part belongs to the Renesas RJK series of power MOSFETs, which are designed for robust industrial and automotive applications. The series emphasizes low on-resistance and fast switching speeds. The RJK03M6DPA variant specifically utilizes the WPAK-8 package, offering a balance between current handling and board space efficiency compared to larger packages.
Single FETs, MOSFETs Replacement Considerations
Publicly confirmed substitute part numbers for RJK03M6DPA-WS#J5A were not found in the provided source material. Verify compatibility with any potential replacements by matching VDSS, ID, RDS(on), Qg, and package dimensions strictly against the official datasheet specifications.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
