RJP60D0DPK-00#T0

RJP60D0DPK-00#T0

  • Description:IGBT 600V 45A TO3P
  • Series:-

SKU:42a9d7eaaf13 Category: Brand:

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Product Detailed Parameters

  • Description:IGBT 600V 45A TO3P
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tube
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):45 A
  • Current - Collector Pulsed (Icm):-
  • Vce(on) (Max) @ Vge, Ic:2.2V @ 15V, 22A
  • Power - Max:140 W
  • Switching Energy:-
  • Input Type:Standard
  • Gate Charge:45 nC
  • Td (on/off) @ 25°C:35ns/90ns
  • Test Condition:300V, 22A, 5Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-3P-3, SC-65-3
  • Supplier Device Package:TO-3P
  • Grade:-
  • Qualification:-

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RJP60D0DPK-00#T0

Overview

The RJP60D0DPK-00#T0 is a trench-type Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics. It features a maximum collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 45 A at 25°C. The device exhibits a maximum on-state voltage drop of 2.1 V when tested at a gate-emitter voltage of 15 V and a collector current of 22 A. Key switching parameters include a turn-on delay time of 45 ns and a turn-off delay time of 100 ns under standard test conditions of 300 V, 22 A, and a 5 Ohm gate resistor. The component is housed in a TO-3PFM package with a maximum power dissipation capacity of 40 W.

Feature Summary

  • Utilizes trench technology for efficient high-frequency switching performance.
  • Designed for robust operation within a junction temperature range up to 150°C.
  • Features low gate charge characteristics to facilitate drive circuit efficiency.

Applications

  • Power Factor Correction (PFC) circuits
  • Uninterruptible Power Supply (UPS) systems
  • Solar power generation inverters
  • Welding equipment

Procurement Notes

Verify the specific ordering suffix and manufacturing date code against the latest Renesas datasheet before procurement. Confirm that the TO-3PFM package dimensions match the target PCB footprint. Ensure compliance with RoHS directives if required by the end application. Check for any product change notices regarding labeling or material composition updates.

Selection Notes

Select this component for applications requiring 600V blocking capability and moderate current handling up to 45A. Consider the 40W power dissipation limit and ensure adequate heatsinking is provided. Evaluate the switching speeds against the system's operating frequency requirements. Verify that the gate drive voltage aligns with the specified 15V test condition for optimal performance.

Part Context

This part belongs to the RJP/H60 series of IGBTs from Renesas Electronics. The series is specifically engineered for high-frequency applications such as PFC and solar inverters. It shares common design principles with other models in the family but offers distinct electrical characteristics tailored for specific power levels and thermal management needs.

Replacement Considerations

Direct replacements must match the 600V/45A specification and TO-3PFM package. Verify pinout compatibility and thermal resistance values. Cross-reference switching times and saturation voltage to ensure equivalent circuit behavior. Consult Renesas for officially qualified alternative parts within the same product line.

RJP60D0DPK-00#T0RJP60D0DPK-00#T0

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