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The RN1502(TE85L,F) is a dual NPN digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with bias resistors in a single SMV-5 surface-mount package. The device features a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. Each channel includes an input resistor with a typical value of 4.7 kΩ and a resistance ratio of 0.1. The component operates within a temperature range of -55°C to +150°C, with a total power dissipation (Pd) of 300 mW and a cutoff frequency (fT) of 250 MHz.
Verify the complete part number including the suffix (TE85L,F) to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status through official manufacturer documentation or authorized distributor datasheets prior to procurement. Ensure the source provides valid traceability for automotive or industrial qualification requirements if applicable.
Select this component when dual NPN switching with integrated base resistors is required. The 4.7 kΩ input resistance suits standard logic interface levels. Compare against RN1506 or RN1503 variants if different resistance values are needed. Ensure the SMV-5 footprint matches the PCB layout constraints and thermal management capabilities support the 300 mW power dissipation limit.
This component belongs to Toshiba's RN series of pre-biased bipolar junction transistors. These devices combine transistors and resistors to reduce board space and assembly costs. The TE85L designation indicates the specific reel packaging format used for automated surface-mount placement processes.
Direct substitutes include RN1506(TE85L,F) and RN1503(TE85L,F) from the same manufacturer family. Verify pin compatibility and resistance values before substitution. Cross-reference with other manufacturers' dual NPN digital transistors only if electrical parameters and package dimensions are identical.