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The RN1503(TE85L,F) is a dual NPN digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates two transistors with bias resistors into an SMV-5 surface-mount package. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, continuous collector current of 100 mA, and power dissipation of 300 mW. The device features a typical input resistance of 22 kΩ, a minimum DC current gain (hFE) of 70, and a maximum operating frequency of 250 MHz. It operates within a temperature range of -55°C to +150°C.
Verify the complete part number including the ordering suffix TE85L,F to ensure correct tape-and-reel packaging configuration. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer. Validate that the SMV-5 footprint matches the target PCB design requirements before finalizing procurement orders.
Select this component when a dual NPN configuration with integrated biasing is required for space-constrained designs. The 22 kΩ input resistance suits standard logic interface levels. Ensure the 50 V voltage rating and 100 mA current capacity meet the specific load requirements of the target application circuit.
This component belongs to Toshiba's RN series of bias resistor built-in transistors. These devices are engineered to simplify circuit design by replacing discrete transistors and resistors with single packaged units. The RN1503 specifically provides a dual NPN solution suitable for general-purpose digital switching tasks.
Cross-reference with other dual NPN digital transistors in the SMV-5 package having similar VCEO, IC, and R1 values. Verify pinout compatibility and thermal characteristics before substitution.