RN1503(TE85L,F)

RN1503(TE85L,F)

$0.32
  • Description:TRANS 2NPN PREBIAS 0.3W SMV
  • Series:-

SKU:16589a2353fe Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN PREBIAS 0.3W SMV
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Cut Tape (CT)
  • Transistor Type:2 NPN - Pre-Biased (Dual) (Emitter Coupled)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):22kOhms
  • Resistor - Emitter Base (R2):22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 10mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:250MHz
  • Power - Max:300mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-74A, SOT-753
  • Supplier Device Package:SMV

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RN1503(TE85L,F)

Overview

The RN1503(TE85L,F) is a dual NPN digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates two transistors with bias resistors into an SMV-5 surface-mount package. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, continuous collector current of 100 mA, and power dissipation of 300 mW. The device features a typical input resistance of 22 kΩ, a minimum DC current gain (hFE) of 70, and a maximum operating frequency of 250 MHz. It operates within a temperature range of -55°C to +150°C.

Feature Summary

  • Integrates dual NPN transistors with built-in bias resistors to reduce component count
  • Designed for compact equipment manufacturing through Ultra-Super-Mini packaging
  • Optimized for switching, inverter, interface, and driver circuit applications

Applications

  • Switching circuits
  • Inverter circuits
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the complete part number including the ordering suffix TE85L,F to ensure correct tape-and-reel packaging configuration. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer. Validate that the SMV-5 footprint matches the target PCB design requirements before finalizing procurement orders.

Selection Notes

Select this component when a dual NPN configuration with integrated biasing is required for space-constrained designs. The 22 kΩ input resistance suits standard logic interface levels. Ensure the 50 V voltage rating and 100 mA current capacity meet the specific load requirements of the target application circuit.

Part Context

This component belongs to Toshiba's RN series of bias resistor built-in transistors. These devices are engineered to simplify circuit design by replacing discrete transistors and resistors with single packaged units. The RN1503 specifically provides a dual NPN solution suitable for general-purpose digital switching tasks.

Replacement Considerations

Cross-reference with other dual NPN digital transistors in the SMV-5 package having similar VCEO, IC, and R1 values. Verify pinout compatibility and thermal characteristics before substitution.

RN1503(TE85L,F)RN1503(TE85L,F)
$0.32
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