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The RN1505(TE85L,F) is a dual NPN digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates two transistors with built-in bias resistors into an SMV-5 surface-mount package. Key electrical specifications include a collector-emitter voltage (VCEO) of 50 V, a continuous collector current of 100 mA, and a power dissipation rating of 300 mW. The device features a typical input resistance of 10 kOhms and a minimum DC current gain (hFE) of 80. It supports a maximum operating frequency of 250 MHz and operates within a temperature range of -55°C to +150°C.
Verify the specific part number RN1505(TE85L,F) against official Toshiba Semiconductor and Storage documentation to confirm availability and exact specifications. Ensure compatibility with design requirements regarding voltage, current, and thermal limits before procurement.
Select this component when a dual NPN configuration with integrated biasing is required in a small form factor. Consider the 10 kOhm input resistance and 50 V voltage rating to ensure suitability for the target logic levels and supply voltages.
This component belongs to the RN15xx series of digital transistors from Toshiba. These devices are designed to simplify circuit design by replacing discrete transistors and resistors with a single integrated solution, facilitating miniaturization and cost reduction in electronic assemblies.
Consult official cross-reference data or manufacturer substitution guides for verified equivalent parts. Do not assume functional interchangeability with other models without verifying pinout, electrical ratings, and package dimensions.