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The RN1507(TE85L,F) is a pre-biased bipolar junction transistor (BJT) manufactured by Toshiba Semiconductor and Storage. It features a dual NPN configuration housed in an SC-88A (SMV) surface-mount package. Key electrical specifications include a collector-emitter voltage of 50V, a continuous collector current of 100mA, and a maximum power dissipation of 300mW. The device supports a maximum operating frequency of 250MHz and operates within a temperature range of -55°C to +150°C.
Verify the specific suffix TE85L against the official Toshiba datasheet to confirm packaging and tape/reel specifications. Ensure compatibility with RoHS directives if required by your manufacturing standards. Cross-reference the SMV package dimensions with your PCB footprint library to guarantee accurate placement during assembly processes.
Select this component when a dual NPN configuration with integrated biasing is required to reduce external resistor count. The 50V rating and 100mA current capacity suit low-voltage digital logic applications. Consider the 300mW power dissipation limit and thermal constraints of the small SC-88A package for proper heat management in dense assemblies.
This part belongs to Toshiba's RN series of Bias Resistor Built-in Transistors (BRBTs). These devices combine BJTs with internal resistors to simplify bias network design. The RN1507 specifically provides a dual NPN solution, offering a compact alternative to discrete transistor and resistor combinations in modern electronics.
Public confirmed substitute part numbers are not available in the provided documentation.