RN1507(TE85L,F)

RN1507(TE85L,F)

$0.26
  • Description:TRANS 2NPN PREBIAS 0.3W SMV
  • Series:-

SKU:32fa202fe433 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN PREBIAS 0.3W SMV
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):10kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:250MHz
  • Power - Max:300mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-74A, SOT-753
  • Supplier Device Package:SMV

Download product information

RN1507(TE85L,F)

Overview

The RN1507(TE85L,F) is a pre-biased bipolar junction transistor (BJT) manufactured by Toshiba Semiconductor and Storage. It features a dual NPN configuration housed in an SC-88A (SMV) surface-mount package. Key electrical specifications include a collector-emitter voltage of 50V, a continuous collector current of 100mA, and a maximum power dissipation of 300mW. The device supports a maximum operating frequency of 250MHz and operates within a temperature range of -55°C to +150°C.

Feature Summary

  • Integrates dual NPN transistors with built-in bias resistors for simplified circuit design
  • Optimized for high-speed switching applications with a 250MHz maximum operating frequency
  • Compact SC-88A (SMV) surface-mount package suitable for space-constrained layouts

Applications

  • General-purpose signal switching circuits
  • Logic level translation interfaces
  • Driver stages for low-power loads

Procurement Notes

Verify the specific suffix TE85L against the official Toshiba datasheet to confirm packaging and tape/reel specifications. Ensure compatibility with RoHS directives if required by your manufacturing standards. Cross-reference the SMV package dimensions with your PCB footprint library to guarantee accurate placement during assembly processes.

Selection Notes

Select this component when a dual NPN configuration with integrated biasing is required to reduce external resistor count. The 50V rating and 100mA current capacity suit low-voltage digital logic applications. Consider the 300mW power dissipation limit and thermal constraints of the small SC-88A package for proper heat management in dense assemblies.

Part Context

This part belongs to Toshiba's RN series of Bias Resistor Built-in Transistors (BRBTs). These devices combine BJTs with internal resistors to simplify bias network design. The RN1507 specifically provides a dual NPN solution, offering a compact alternative to discrete transistor and resistor combinations in modern electronics.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

RN1507(TE85L,F)RN1507(TE85L,F)
$0.26
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